| PART |
Description |
Maker |
| AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位）的CMOS 5.0伏只，扇区擦除闪
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F800T-90EC AM29F800T-90ECB AM29F800T-90FI AM29 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM |
512K-Bit (64K x 8) High Performance CMOS EPROM
524,288-Bit (64K x 8) High Performance CMOS EPROM
524/288-Bit (64K x 8) High Performance CMOS EPROM
Capacitors.. 100 PIECE MIN.. NC/NR
|
FAIRCHILD[Fairchild Semiconductor]
PROM
|
| MSM538052E |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM
From old datasheet system
|
OKI
|
| TC55VZM208AFTN-12 TC55VZM208AFTN-10 TC55VZM208AFTN |
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
TOSHIBA
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC55V040AFT-55 TC55V040AFT-70 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55VD1636FFI-133 TC55VD1636FFI-150 |
524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| MSM56V16160F |
2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| TC55VCM208ASTN40 TC55VCM208ASTN55 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VD818FFI-133 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
|
